BSC022N03S |
RFQ for BSC022N03S Required Field |
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| Technical/Catalog Information | BSC022N03S |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 50A |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 7490pF @ 15V |
| Power - Max | 104W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 58nC @ 5V |
| Package / Case | TDSON-8 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSC022N03S BSC022N03S |
| Product | Manufacturers | Pack | D/C |
| BSC022N03S | - | - | 06+ |
Features |
| • Fast switching MOSFET for SMPS• Optimized technology for notebook DC/DC converters• Qualified according to JEDEC1 for target applications• N-channel• Logic level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)• Superior thermal resistance• Avalanche rated• dv /dt rated |
| Parameter | Symbol | Conditions | Value | Unit |
| Continuous drain current | ID | T C=25 °C | 50 | V |
| T C=100 °C | 50 | |||
| T A=25 °C, RthJA=45 K/W2) |
28 | |||
| Pulsed drain current | ID,pulse | T C=25 °C3) | 200 | |
| Avalanche energy, single pulse | EAS | I D=50 A, RGS=25 Ω | 800 | mJ |
| Reverse diode dv /dt | dv /dt | I D=50 A, VDS=24 V, di /dt =200 A/µs, T j,max=150 °C |
6 | kV/µs |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | T C=25 °C | 104 | W |
| T A=25 °C, RthJA=45 K/W2) |
2.8 | |||
| Operating and storage temperature | Tj, Tstg | -55 ... 150 | °C | |
| IEC climatic category; DIN IEC 68-1 | 55/150/56 |
